Intermixing in Cu/Co: Molecular Dynamics Simulations and Auger Electron Spectroscopy Depth Profiling

Abstract:

• Periodical: Defect and Diffusion Forum (Volume 264)
• Pages: 19-26
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.264.19
• Online since: April 2007
• Authors: Péter Süle, Miklós Menyhárd
• Keywords: Atomistic Computer Simulation, Auger Electron Spectroscopy (AES), Cu/Co, Depth Profiling, Ion-Solid Interaction, Ion-Sputtering, Molecular Dynamic (MD), Multilayer, Sputter Removal, Thin Film

References

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[22] http: /www. srim. org. 6 FIG. 1. The measured depth profile: projectile Ar + , ion energy 1 keV, angle of incidence 84 º . The concentration of Cu is given as a function of the removed layer thickness (measured from the interface in Å). The filled diamonds denote the points at which σ 2 values are determined by AESD. Inset figure: The broadening (σ2) of the interface (Å 2) as a function of the fluence (ion/Å). The dotted lines show the two extreme of the possible slopes (mixing rates). . 7 FIG. 2. The simulated filtered <R2> (SAD, Å 2) as a function of the number of the ion impacts (number fluence) at 1 keV ion energy at grazing angle of incidence using simulated ion-sputtering (molecular dynamics). The dotted line is a linear fit to the <R 2> curves. <R2> is simulated with ion impact points at the free surface (9 ML above the interface) and also at 4 ML above the interface. Inset figure: The simulated filtered <R2> (Å 2) for sputter layer-by-layer removal up to the removal of 4 layers. The error bars are standard deviations.