Paper Titles
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39
Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45
Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography
p.53
High Quality P-Type 4H-SiC Growth by PVT Method
p.59
Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
p.65
Observation and Analysis of the “Galaxy” Defect in 4H-SiC through X-Ray Synchrotron Topography
p.73
Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
p.79
Silicon Carbide Epitaxial Defects and Substrate Defects Analysis by Dynamic Photoluminescence and X-Ray Topography
p.87
Unveiling the Role of Crystallographic Defects in SiC Device Reliability with Multi Modal Structural Analysis
p.93

Silicon Carbide Epitaxial Defects and Substrate Defects Analysis by Dynamic Photoluminescence and X-Ray Topography

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Abstract:

The performance and reliability of silicon carbide (SiC) devices are critically dependent on the quality of epitaxial layers which in turn are influenced by substrate properties. The accurate classification of epitaxial defects coming from substrate crystal defects and surface defects is critical since these can adversely affect device performance. In this paper, two new methods of defect characterization in substrates and epitaxial layers are presented utilizing photoluminescence (PL) spectrum and carrier lifetime. These methods can be used to study the evolution of defects from substrates to epi and to better predict Epi yields.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

87-91

DOI:

https://doi.org/10.4028/p-w9w53Z

Citation:

Cite this paper

Online since:

May 2026

Authors:

Dong Lee*, Kirby Schmidt, Muhammad Ali Johar, Shanthi Subramanian, Albert Burk, Andy Souzis

Keywords:

Characterization, Defects, Dislocations, Photoluminescence

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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