Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC

Abstract:

The extensive study of point defects in 4H-SiC over the past two decades has led to a comprehensive understanding of their influence on device performance. Specifically, the dominant defects Z_1/2 and EH_6/7 have been well-quantified and are now formally assigned to specific states of the carbon vacancy. Building upon this foundational knowledge, our study investigates the defect landscape created by the novel process of Energy-Filtered Ion Implantation (EFII). Using DLTS and MCTS measurements conducted within the temperature range of 50−650 K, we analyzed the trap levels created by 19 MeV Nitrogen implantation in as-grown 4H-SiC epitaxial wafer. The majority carrier (electrons) trap with DLTS measurements reveal the presence of prominent peaks associated with carbon complexes, labeled as ON0a (E_c - 0.586 eV) and ON0b / Z_1/2 at (E_c - 0.681 eV), along with smaller peaks in the shallow region and a broader peak identified as EH_6/7 at (E_c - 1.53 eV) as the deepest peak. Notably, the close proximity of the ON0b peak to the well-known Z_1/2 peak poses a significant challenge, preventing the definitive assignment of a defect structure to the known carbon complexes. On the contrary, minority carrier (holes) trap detection with MCTS reveal B-center at (E_V + 0.24 eV) and (E_V + 0.33 eV) and a negligible shallow peak at (E_V + 0.22 eV) assigned as X center. There was no indication of D-center formation in the EFII implanted samples.

• Periodical: Defect and Diffusion Forum (Volume 452)
• Pages: 65-71
• DOI: https://doi.org/10.4028/p-zY1ER5
• Online since: May 2026
• Authors: Hitesh Jayaprakash*, Manuel Belanche, Constantin Csato, Florian Krippendorf, Ulrike Grossner, Michael Rueb
• Keywords: 4H-SiC, DLTS, Energy Filtered Ion Implantation, MCTS

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