Paper Titles
Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
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DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
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Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
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Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
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Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography
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High Quality P-Type 4H-SiC Growth by PVT Method
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Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
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Observation and Analysis of the “Galaxy” Defect in 4H-SiC through X-Ray Synchrotron Topography
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Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
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Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography

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Abstract:

Micropipe defects in silicon carbide (SiC) materials significantly degrade the performance of SiC materials and their applications in semiconductor devices. In this study, systematic methods were utilized to characterize different micropipes in 4H-SiC. X-ray topography was employed to investigate the morphology of micropipe defects in SiC substrates and quantify their associated lattice distortion fields. Meanwhile, white light interferometry mode microscopy and inner stain were utilized to thoroughly characterize their properties. It was found that micropipes were accompanied with different size and distortion areas in SiC substrate. This work will be served as a refined characterization of micropipes and give guidance for device application for SiC substrate.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

53-57

DOI:

https://doi.org/10.4028/p-HPx5qU

Citation:

Cite this paper

Online since:

May 2026

Authors:

Li Sun, Xue Jian Xie*, Xiu Fang Chen, Xiang Long Yang, Yan Peng, Xiao Bo Hu, Xian Gang Xu

Keywords:

Defect Characterization, Micropipe, SiC, X-Ray Topography

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] Arora, Aman, et al. "Study on evolution of micropipes from hexagonal voids in 4H-SiC crystals by cathodoluminescence imaging." Microscopy and Microanalysis 27.1 (2021): 215-226.

DOI: 10.1017/s1431927621000039

Google Scholar

[2] Huang, Yu-Chun, et al. "Comparative Analysis of Defect Characteristics in Silicon Carbide Wafers of Different Grades." Sensors and Materials 36.5 (2024): 1797-1803.

DOI: 10.18494/sam4795

Google Scholar

[3] Zhang, Xuexia, et al. "Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode." CrystEngComm 25.47 (2023): 6622-6626.

DOI: 10.1039/d3ce00295k

Google Scholar

[4] Li Y, Zhang Z, Song Q, et al. Surface micromorphology and nanostructures evolution in hybrid laser processes of slicing and polishing single crystal 4H-SiC[J]. Journal of Materials Science & Technology, 184 (2024): 235-244.

DOI: 10.1016/j.jmst.2023.09.046

Google Scholar

[5] Fujie, F. et al. Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC. Acta Materialia 208(2021):116746.

DOI: 10.1016/j.actamat.2021.116746

Google Scholar

[6] Cheng, Q. et al. Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations. Materials Science in Semiconductor Processing 174(2024):108207.

DOI: 10.1016/j.mssp.2024.108207

Google Scholar

[7] Li, Jiajun, et al. Dislocations in 4H silicon carbide. Journal of Physics D: Applied Physics 55.46 (2022): 463001.

Google Scholar