Paper Titles

Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay
p.15

DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters
p.21

Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
p.27

DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
p.33

Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39

Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45

Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography
p.53

High Quality P-Type 4H-SiC Growth by PVT Method
p.59

Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
p.65

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 452Advanced Defects Study and Monitoring in New...

Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices

Article Preview

View Pdf By email

Abstract:

A new design approach on 4H-SiC material is ongoing to improve the electrical performance of devices. As seen in silicon devices, multi-epitaxial growth enhances performance by reducing on-resistance (R_on). However, devices built on SiC face several challenges due to the very low dopant diffusion (e.g. phosphorus and aluminum) and defect evolution during the epitaxial growth. Monitoring defects like prismatic faults, stacking faults, partial dislocations, and micropipes, especially after regrowth, is essential to assess their impact on device performance. Defects with high killer ratio must be closely tracked to understand evolution thereof. In this work, we will show a method for early-stage process characterization and defect root-cause identification through sensitive inspections, effective reviews, and accurate defect classification to detect critical defects in 4H-SiC material when more than one epitaxial step is considered.

You have full access to the following eBook

Defects Evaluation

Info:

Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

39-44

DOI:

https://doi.org/10.4028/p-SZxKD4

Citation:

Cite this paper

Online since:

May 2026

Authors:

Keywords:

4H-SiC, Defects, High Power Devices, Metrology

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

[1] https://www.yolegroup.com/product/report/sic-transistor-comparison-2023/.

[2] R. Raina et al., Achieving Zero-Defects for Automotive Applications, 2008 IEEE International Test Conference, (2008).

DOI: 10.1109/TEST.2008.5483611

[3] D. Raciti, R. Anzalone, M. Isacson, N. Piluso, A. Severino, Defect and Diffusion Forum, Vol 434, pp.117-121.

DOI: 10.4028/p-knj9ce

[4] N. Piluso, et. al., IEEE International Reliability Physics Symposium (IRPS), pp.1-5 (2025).

[5] N. Piluso et. al., Materials Science Forum, 963, pp.91-96 (2019).

[6] T. Kimoto, H. Watanabe, Applied Physics Express 12, 120101 (2020).

[7] M. Na. et al, Materials Science in Semiconductor Processing 175 (2024) 108247.

[8] I. Yukari, et. al., Journal of Applied Physics 123(22):225101 (2018).

[9] R. Ghandi et. al., Proceedings of the 35th International Symposium on Power Semic. Devices & ICs, (2023).

[10] C. Ma et al., Chao Ma et al 2024 J. Semicond. 45 111301.

[11] K. Ryoji et al., 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD, IEEE, p.39–42, 2019.

[12] RT. Leonard et al., Materials Science Forum, Trans Tech Publications Ltd, (2017).

[13] C. Langpoklakpam et al., Crystals, Vol 12, n. 2, p.245 (2022).

[14] A. Severino et al., Materials Science Forum, 963, pp.407-411 (2019).

[15] T. Kimoto, Japanese Journal of Applied Physics 54, 040103 (2015).