Paper Titles
Preface
The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC
p.1
Formation Mechanism and Reduction of Surface Pits on 4H-SiC Epitaxial Layer
p.9
Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay
p.15
DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters
p.21
Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
p.27
DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
p.33
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39
Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45

Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay

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Abstract:

The quality of the epitaxial layer plays an important role in the performance of modern power electronic devices. Minority carrier lifetime is known to be sensitive to defects like dislocations, stacking faults, and points defects. Therefore, in this work lifetime measurements by microwave detected photoconductivity decay are used to evaluate the quality of the epitaxial layer on various 4H-SiC substrates from different vendors. The stability of the measurement technique is shown by a daily release measurement. This allows for a reliable analysis of almost 300 typical 1,200 V epilayer stacks. It has been shown that the effective lifetime of these samples can be separated into two different ranges. The lifetime values of about 120 ns fit to theoretical calculations. The cause for the increased lifetime of about 250 ns in the second range has yet to be determined in further research. Furthermore, the lifetime maps were used to locate defects in the surface near regions.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

15-19

DOI:

https://doi.org/10.4028/p-d2PrxR

Citation:

Cite this paper

Online since:

May 2026

Authors:

Christian Wißgott*, Birgit Kallinger, Mathias Rommel

Keywords:

Charge Carrier Lifetime, Defects, Photoconductivity Decay, Statistical Process Control

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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