Preface
The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC
p.1
p.1
Formation Mechanism and Reduction of Surface Pits on 4H-SiC Epitaxial Layer
p.9
p.9
Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay
p.15
p.15
DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters
p.21
p.21
Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
p.27
p.27
DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
p.33
p.33
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39
p.39
Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45
p.45
Preface
Abstract:
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