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Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates

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Abstract:

8-inch 4H-SiC single crystals were grown under different temperature fields and nitrogen doping conditions by physical vapor transport method. The distributions of basal plane dislocation (BPD) in 4H-SiC single crystals under different growth conditions were studied by molten KOH etching and X-ray Topography (XRT). The results indicate that the BPDs in the crystals grown under convex temperature field are distributed at the edge. In comparison, the BPD distributions in crystals grown under a concave temperature field are relatively closer to the center. Furthermore, the BPDs distributions in nitrogen-doped crystals exhibit quadratic symmetry caused by prismatic slip. In contrast, no prismatic slip-induced slip bands were observed in the undoped crystals, and the BPD distributions in the undoped crystals are consistent with the shear stress distribution caused by basal plane slip.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

27-31

DOI:

https://doi.org/10.4028/p-QD8ybH

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Online since:

May 2026

Authors:

Zhen Xing Fu, Xiang Long Yang*, Xiu Fang Chen, Xue Jian Xie, Li Sun, Hong Yu Shao, Wen Hao Han, Hong Xi Wang, Guo Jian Yu, Xian Gang Xu

Keywords:

4H-SiC, 8-Inch, BPD Distribution, Dislocations Slip

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Creative Commons CC BY 4.0

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* - Corresponding Author

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