The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC

Jimmy Thörnberg; Björn Magnusson

doi:10.4028/p-Wfgrr2

Paper Titles

The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC
p.1

Formation Mechanism and Reduction of Surface Pits on 4H-SiC Epitaxial Layer
p.9

Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay
p.15

DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters
p.21

Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
p.27

DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
p.33

Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39

Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45

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The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC

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Abstract:

Results from optical defect inspections, and X-ray topography, on wafers from entire 4H-SiC ingots provide a clear visualization on the positional dependance of bulk inclusions in ingots with respect to growth stages, looking to both density and size. It is also clear while studying the superpositioning of Laue–Bragg interference densities that the different categories of said defectivity generate new crystallographic defects, dislocations. These in turn lead to significant reductions in usability of wafers, and the lack of tracing such defects, cause an increased difficulty to predict the final device yield, as is displayed by growing epitaxial layers on materials heavily affected by bulk inclusions.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

1-7

DOI:

https://doi.org/10.4028/p-Wfgrr2

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Online since:

May 2026

Authors:

Jimmy Thörnberg*, Björn Magnusson

Keywords:

200 mm, 4H-SiC, Bulk Inclusions, Defect Inspection, Dislocations, X-Ray Topography

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