Paper Titles
Preface
The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC
p.1
Formation Mechanism and Reduction of Surface Pits on 4H-SiC Epitaxial Layer
p.9
Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay
p.15
DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters
p.21
Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
p.27
DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
p.33
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39
Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45

DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters

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Abstract:

This paper investigates the effect of DLTS measurement parameters on characterizing deep level defects in 4H-SiC Schottky barrier diode (SBD). By adjusting parameters such as the time window (tW), pulse time (tP), reverse voltage (UR), and pulse voltage (UP), the underlying mechanisms influencing defect peak positions, signal amplitudes, and peak broadening are analyzed. Experimental results reveal three deep level defects identified in 4H-SiC SBD: majority carrier traps T1 (EC - 0.66 eV) and T2 (EC - 1.0 eV), along with minority carrier trap T3 (EV + 1.1 eV). Parameter settings not only influence defect characterization sensitivity and concentration calculations but also reveal the dynamics of carrier capture and emission. Through the thorough analysis of the DLTS signal and behavior under different DLTS measurement conditions, the electronic properties and concentration profiles of deep level defects in 4H-SiC epitaxial layers are determined.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

21-26

DOI:

https://doi.org/10.4028/p-7MIvaq

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Cite this paper

Online since:

May 2026

Authors:

Lan Luo*, Yu Zhong, Xiao Shuang Yang, Quan Xin Zhao, Peng Cui, Ying Xin Cui, Ming Sheng Xu, Xian Gang Xu, Ji Sheng Han

Keywords:

4H-SiC, Characterization, Deep Level Defects, DLTS, Measurement Parameters, SBD

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* - Corresponding Author

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