DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
p.33
p.33
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
p.39
p.39
Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45
p.45
Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography
p.53
p.53
High Quality P-Type 4H-SiC Growth by PVT Method
p.59
p.59
Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
p.65
p.65
Observation and Analysis of the “Galaxy” Defect in 4H-SiC through X-Ray Synchrotron Topography
p.73
p.73
Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
p.79
p.79
Silicon Carbide Epitaxial Defects and Substrate Defects Analysis by Dynamic Photoluminescence and X-Ray Topography
p.87
p.87
High Quality P-Type 4H-SiC Growth by PVT Method
Abstract:
The fabrication of n-channel IGBTs is constrained by the low conductivity as well as poor quality of the p-type SiC substrate. This paper reports 6-inch high quality p-type 4H-SiC wafers achieved by PVT method. The wafers were examined by synchrotron X-ray topography indicating average defect densities are on par or better than commercial 6-inch n-type wafers. Large areas of the wafer, especially the middle region of the wafer is characterized by very low density of BPDs. The extent of prismatic slip due to radial thermal gradients is also vastly reduced compared to typical n-type wafers.
You have full access to the following eBook
Info:
Periodical:
Defect and Diffusion Forum (Volume 452)
Pages:
59-64
DOI:
https://doi.org/10.4028/p-h1jN4u
DOI link
Citation:
Online since:
May 2026
Keywords:
Permissions:
Share:
Citation: