Paper Titles
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
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Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
p.45
Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography
p.53
High Quality P-Type 4H-SiC Growth by PVT Method
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Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
p.65
Observation and Analysis of the “Galaxy” Defect in 4H-SiC through X-Ray Synchrotron Topography
p.73
Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
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Silicon Carbide Epitaxial Defects and Substrate Defects Analysis by Dynamic Photoluminescence and X-Ray Topography
p.87
Unveiling the Role of Crystallographic Defects in SiC Device Reliability with Multi Modal Structural Analysis
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Observation and Analysis of the “Galaxy” Defect in 4H-SiC through X-Ray Synchrotron Topography

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Abstract:

Silicon carbide (SiC) is valued for high-power and high-frequency devices, but its performance is limited by crystalline defects. We report a newly observed defect arrangement, termed the “galaxy” defect, in wafers from a PVT-grown 6-inch 4° off-axis boule. Optical microscopy revealed dense clusters of micron-sized inclusions, while synchrotron X-ray topography (XRT) showed associated dislocation networks. Transmission synchrotron XRT indicated threading dislocation clusters, and grazing images revealed high densities of basal plane dislocations, deflected Frank partials, and threading-edge-dislocation low-angle grain boundaries (TED-LAGBs). The defect evolved as growth progressed, producing increasingly complex dislocation structures. Based on the observation, we proposed a mechanism for the evolution of the defect involving the generation, evolution, and interaction between the inclusions and dislocations.

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Periodical:

Defect and Diffusion Forum (Volume 452)

Pages:

73-78

DOI:

https://doi.org/10.4028/p-kRPYG5

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Online since:

May 2026

Authors:

Kai Xuan Zhang*, Ze Yu Chen, Shan Shan Hu, Jian Pei Zhang, Yu Zhuo Li, Dong Lin Wu, Hao Chi Wang, Balaji Raghothamachar, Michael Dudley, Andrey Soukhojak

Keywords:

4H-SiC, Defect Characterization, X-Ray Topography

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