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HomeEngineering InnovationsEngineering Innovations Vol. 3Parametric Analysis of SiO2 MOSFET Based Absorber...

Parametric Analysis of SiO₂MOSFET Based Absorber for 5G Massive MIMO Base Station

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Abstract:

The performance of the SiO₂ MOSFET-based absorber as a solution to arching within transmission lines (used for RF signal transportation) has been realized and analyzed at 28 GHz using the reflected signal from the R_Xbranch of 5G massive MIMO base station. The reflected signal from the receiver (R_X) branch of base stations may lead to interference, thus creating a performance reducing condition (arching) within the transmission lines. For optimum performance in the 5G regime, the SiO₂ MOSFET has been used to solve the problem of arching within the transmission line under large field intensities of a standing wave resulting from the impedance. The SiO₂ MOSFET-based absorber has been observed for a reflectivity of -79.5 dB and a rectification efficiency greater than 17 %

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Engineering Innovations Vol. 3

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Periodical:

Engineering Innovations (Volume 3)

Pages:

41-46

DOI:

https://doi.org/10.4028/p-xbmtx2

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Online since:

September 2022

Authors:

Elliot O. Omoru, Viranjay Srivastava*

Keywords:

Material, Microelectronics, MOSFET, Nanotechnology, Rf Signal, SiO₂, VLSI

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[1] M. Shafi, A.F. Molisch, P.J. Smith, T. Haustein, P. Zhu, P.D. Silva, F. Tufvesson, A. Benjebbour, and G. Wunder. 5G: A tutorial overview of standards, trials, challenges, deployment, and practice. IEEE J. on Selected Areas in Communications. 35(2017) 1201-1221.

DOI: 10.1109/jsac.2017.2692307

[2] M. Almarashli and S. Lindenmeier. Evaluation of vehicular 4G/5G-MIMO antennas via data-rate measurement in an emulated urban test drive. 48th European Microwave Conference, Spain. (2018) 300-303.

DOI: 10.23919/eumc.2018.8541757

[3] J. Isabona and V.M. Srivastava. Downlink massive MIMO systems: achievable sum rates and energy efficiency perspective for future 5G systems. Wireless personal Communication. 96 (2017) 2779-2796.

DOI: 10.1007/s11277-017-4324-y

[4] S. Shinjo, K. Nakatani, J. Kamioka, R. Komaru, H. Noto, H. Nakamizo, S. Yamaguchi, S. Uchida, A. Okazaki, and K. Yamanaka. A 28GHz-band highly integrated GaAs RF frontend module for massive MIMO in 5G. IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies, Ireland. (2018) 1-3.

DOI: 10.1109/imws-5g.2018.8484564

[5] E.O. Omoru and V.M. Srivastava. MOSFET based absorber of reflected signal in 5G massive MIMO base station - A circuit perspective. J. of Communication. 15 (2020) 833-840.

DOI: 10.12720/jcm.15.11.833-840

[6] V.M. Srivastava and G. Singh. MOSFET technologies for double-pole four throw radio frequency switch, Springer International Publishing, Switzerland (2013).

DOI: 10.1007/978-3-319-01165-3_4

[7] H. Cao, C. Zhu, J. Liu, L. Tao, X. Wu, and X. Tan. A novel rectifying circuit with circulator in microwave power transmission. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, China. (2016) 1-3.

DOI: 10.1109/imws-amp.2016.7588461

[8] A.S. Sedra and K.C. Smith. Microelectronic circuits: theory and applications. 7th Ed. Oxford University Press (2014).

[9] E.O. Omoru and V.M. Srivastava. Simulation analysis of MOSFET based absorber for reflected RF signal in 5G massive MIMO base station. Int. J. of Emerging Trends in Engineering Research. 8 (2020) 6488-6495.

DOI: 10.30534/ijeter/2020/251892020

[10] W. Chen, F. C. Lee and T. Yamauchi. An improved charge pump, electronic ballast with low THD and low crest factor. IEEE Transactions on Power Electronics. 5 (1997) 867-875.

DOI: 10.1109/63.623005

[11] Y. Yang, F. Zhang, K. Tao, B. Sanchez, H. Wen, and Z. Teng. An improved crest factor minimization algorithm to synthesize multisines with arbitrary spectrum. Physiological Measurement. 36 (2015) 895-910.

DOI: 10.1088/0967-3334/36/5/895

[12] P. Pejovic, P. Bozovic and D. Shmilovitz. Low-harmonic, three-phase rectifier that applies current injection and a passive resistance emulator. IEEE Power Electronics Letters. 3 (2005) 96-100.

DOI: 10.1109/lpel.2005.858411

[13] M.H. Rashid. Power electronics: devices, circuits and applications. 3rd Ed., Pearson, India (2011).

[14] L.A. Filinskyy. Microwave propagation in specimens of foam materials located in rectangular waveguide. 6th Int. Conf. on Ultrawideband and Ultrashort Impulse Signals, Ukraine. (2012) 108-110.

DOI: 10.1109/uwbusis.2012.6379748

[15] V. Rodriguez. Validation of a method for predicting anechoic chamber performance: A technique that uses polynomial approximations for RF absorber reflectivity. IEEE Antennas and Propagation Magazine. 4 (2018) 31-40.

DOI: 10.1109/map.2018.2839895