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HomeJournal of Nano ResearchJournal of Nano Research Vol. 49Controlling of Polarity on the Surface Passivation...

Controlling of Polarity on the Surface Passivation Mechanism of Al₂O₃ for Black Silicon by CLD

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Abstract:

Thin Al₂O₃ films were deposited on p-type black silicon (b-Si) by using chemical liquid phase deposition (CLD) technique. The influence of annealing temperatures on the structural and optical properties of Al₂O₃ films was investigated. The b-Si with 80-nm Al₂O₃ films exhibits a low total reflectance of 5%. The sample annealed 300 °C exhibits negative fixed charge with the density of 1.5×10¹² cm^-2. With the increasing of annealing temperature, negative shift of C-V curve was observed, indicating the polarity of fixed charge changes to positive, with maximal the density of 8.7×10¹¹ cm^-2. The evolution of the polarity of fixed charge is assigned to the decreasing of O: Al ratio caused by the transition of the crystalline type of Al₂O₃. The change of fixed charge polarity in Al₂O₃ provides a feasible route for both p- and n-type Si passivation in Si solar cells by adjusting the thermal post-treatment.

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Journal of Nano Research Vol. 49

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Periodical:

Journal of Nano Research (Volume 49)

Pages:

18-26

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https://doi.org/10.4028/www.scientific.net/JNanoR.49.18

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Online since:

September 2017

Authors:

Bing Ye Zhang*, Yu Jun Wang, Lu Han, Yong Xiang Li, Ai Min Liu

Keywords:

Al₂O₃, Black Silicon, Chemical Liquid Phase Deposition, Surface Passivation

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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