Effect of Gate Engineering and Channel Length Variation in Surrounding Gate MOSFETs

Abstract:

In this paper, the digital and analog performance for Double Material Gate Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (DM SG MOSFET) has been analyzed. A detailed study of DM SG MOSFET is performed for different channel length ratio's. The comparison analysis on surface potential, electric field, transfer characteristics, output characteristics, transconductance and output conductance is carried with respect to the silicon dioxide and hafnium dioxide based device. It has been found from the simulation results that HfO₂ dielectric used DM SG TFET provides better performance than SiO₂ dielectric used DM SG TFET. Also it has been observed from the presented results that the transconductance is 45.32 at 1:3 channel length ratio for DG SG MOSFET.

• Periodical: Journal of Nano Research (Volume 63)
• Pages: 134-143
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.63.134
• Online since: June 2020
• Authors: P. Vimala, T.S. Arun Samuel*
• Keywords: DM SG MOSFET, Drain Current, Gate Engineering, Transconductance

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