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Paper Titles
Preface
Design and Characterization of an ODMR System for NV-Based Quantum Sensing
p.1
Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters
p.7
Scalable Fabrication and Electrical Characterization of Lateral Pin-Diodes on 4H-SiC A-Plane Wafers for Functionalization of Silicon Vacancies
p.17
4H-SiC Tunneling Light Emitter as a Light-Source for Quantum Applications
p.27
A Simulation Study of Electronic Device Designs for the Control of SiC Color Centers as Spin Qubits
p.33
Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs under Heavy-Ion Irradiation
p.41
Channel Length Effects on Threshold Voltage Instability in Gamma Irradiated 4H-SiC PMOSFETs
p.47
High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
p.55
HomeKey Engineering MaterialsKey Engineering Materials Vol. 1056Preface

Preface

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SiC Devices for Quantum Applications and Harsh Radiation Environments Read eBook

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Key Engineering Materials (Volume 1056)

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May 2026

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Creative Commons CC BY 4.0

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