Paper Titles
Preface
Design and Characterization of an ODMR System for NV-Based Quantum Sensing
p.1
Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters
p.7
Scalable Fabrication and Electrical Characterization of Lateral Pin-Diodes on 4H-SiC A-Plane Wafers for Functionalization of Silicon Vacancies
p.17
4H-SiC Tunneling Light Emitter as a Light-Source for Quantum Applications
p.27
A Simulation Study of Electronic Device Designs for the Control of SiC Color Centers as Spin Qubits
p.33
Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs under Heavy-Ion Irradiation
p.41
Channel Length Effects on Threshold Voltage Instability in Gamma Irradiated 4H-SiC PMOSFETs
p.47
High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
p.55

Design and Characterization of an ODMR System for NV-Based Quantum Sensing

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Abstract:

This paper presents the development of a confocal Optically Detected Magnetic Resonance (ODMR) system to study diamond and Silicon Carbide (SiC) for reactor dosimetry and quantum defect analysis. Initially, Nitrogen-Vacancy (NV) centers in diamond were characterized to establish a performance baseline, followed by plans to map and quantify color center populations in SiC crystals before and after alpha and neutron irradiation. By correlating ODMR data with electrical performance metrics, we aim to optimize fabrication and annealing protocols to investigate fast neutron sensitivity. The ODMR system, integrated with a home-built confocal microscopy setup, includes a microwave antenna, magnet, laser, objective, and advanced measurement devices such as Si-APD and Time Tagger 20 for high-resolution T2* and T2 measurements. The characterization of the instrument includes high-resolution fluorescence and ODMR spectra of NV centers in diamond, and improved resolution with confocal optics. Ongoing work focuses on correlating luminescence with reactor neutron fluence and the long-term goal is for the advancing SiC irradiation for integrated spin defect analysis.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

1-6

DOI:

https://doi.org/10.4028/p-E43pvH

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Online since:

May 2026

Authors:

Luke Shoen, Jarod Remy, Lei Raymond Cao*

Keywords:

Neutron Irradiation, Nitrogen-Vacancy Centers, Optically Detected Magnetic Resonance, Quantum Defects, Radiation Sensing, Silicon Carbide (SiC)

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* - Corresponding Author

References

[1] Castelletto, Stefania, and Alberto Boretti. "Silicon carbide color centers for quantum applications." Journal of Physics: Photonics 2, no. 2 (2020): 022001.

DOI: 10.1088/2515-7647/ab77a2

Google Scholar

[2] Gruber, A., A. Drabenstedt, C. Tietz, L. Fleury, Joerg Wrachtrup, and C. von Borczyskowski. "Scanning confocal optical microscopy and magnetic resonance on single defect centers." Science 276, no. 5321 (1997): 2012-2014.

DOI: 10.1126/science.276.5321.2012

Google Scholar

[3] Acosta, Victor M., Erik Bauch, Micah P. Ledbetter, Amir Waxman, L-S. Bouchard, and Dmitry Budker. "Temperature dependence of the nitrogen-vacancy magnetic resonance in diamond." Physical review letters 104, no. 7 (2010): 070801.

DOI: 10.1103/physrevlett.106.209901

Google Scholar

[4] Christle, David J., Paul V. Klimov, Charles F. de las Casas, Krisztián Szász, Viktor Ivády, Valdas Jokubavicius, Jawad Ul Hassan et al. "Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface." Physical Review X 7, no. 2 (2017): 021046.

DOI: 10.1103/physrevx.7.021046

Google Scholar

[5] Nishikawa, Tetsuri, Naoya Morioka, Hiroshi Abe, Koichi Murata, Kazuki Okajima, Takeshi Ohshima, Hidekazu Tsuchida, and Norikazu Mizuochi. "Coherent photoelectrical readout of single spins in silicon carbide at room temperature." Nature Communications 16, no. 1 (2025): 3405.

DOI: 10.1038/s41467-025-58629-1

Google Scholar

[6] Levine, E., Turner, M., Kehayias, P., Hart, C., Langellier, N., Trubko, R., Glenn, D., Fu, R., & Walsworth, R. (2019). Principles and techniques of the quantum diamond microscope. Nanophotonics, 8(11), 1945–1973.

DOI: 10.1515/nanoph-2019-0209

Google Scholar

[7] Diamond Plate Information. (n.d.). Adámas Nanotechnologies. https://www.adamasnano.com/diamond-plate-information.

Google Scholar

[8] K. Sasaki, Y. Monnai, S. Saijo, R. Fujita, H. Watanabe, J. Ishi-Hayase, K. M. Itoh, and E. Abe, "Broadband, large-area microwave antenna for optically detected magnetic resonance of nitrogen-vacancy centers in diamond," Rev. Sci. Instrum., vol. 87, no. 5, p.053904, May 2016.

DOI: 10.1063/1.4952418

Google Scholar