Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation

Ji Wang Yan; Tooru Asami; Tsunemoto Kuriyagawa

doi:10.4028/www.scientific.net/KEM.389-390.469

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 389-390Complete Recovery of Subsurface Structures of...

Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation

Abstract:

Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.

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Periodical:

Key Engineering Materials (Volumes 389-390)

Pages:

469-474

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.389-390.469

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Online since:

September 2008

Authors:

Ji Wang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Keywords:

Nd:YAG Laser, Phase Transformation, Single Crystal Silicon, Subsurface Damage

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