Resistance Changes of (La, Sr)MnO3 Thin Film via Exchange Bias Tuning by the Application of an External Electric Field

Takeshi Yokota; Shotaro Murata; Shinya Kito; Manabu Gomi

doi:10.4028/www.scientific.net/KEM.421-422.107

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Resistance Changes of (La, Sr)MnO3 Thin Film via...

Resistance Changes of (La, Sr)MnO₃ Thin Film via Exchange Bias Tuning by the Application of an External Electric Field

Abstract:

We have investigated the relationships between the electric field-induced resistance change and the strength of the exchange interaction of the Cr2O3/ La0.7Sr0.3MnO3 (LSMO) magnetic hetero system. The hetero system subjected to field cooling (FC) showed a positive shift in the magnetization curves due to an exchange bias. The exchange bias field changed depending on the FC field. Resulting from the exchange behaviors, the resistance of LSMO film was changed by the application of an electric field to the Cr2O3 gate. This resistance change is more likely due to the interface interaction strength between the Cr2O3 and LSMO film

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Key Engineering Materials (Volumes 421-422)

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107-110

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.421-422.107

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Online since:

December 2009

Authors:

Takeshi Yokota, Shotaro Murata, Shinya Kito, Manabu Gomi

Keywords:

Electrical Properties, Exchange Bias, Half Metal, Magnetic Property, Magneto-Electric Effect

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