Dielectric Properties of Pb1-xBaxZrO3 Thin Films with Higher Barium Content

Xi Hong Hao; Ji Wei Zhai

doi:10.4028/www.scientific.net/KEM.421-422.119

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Dielectric Properties of Pb1-xBaxZrO3 Thin Films...

Dielectric Properties of Pb_1-xBa_xZrO₃ Thin Films with Higher Barium Content

Abstract:

The dc bias and temperature dependence of dielectric properties of Pb1-xBaxZrO3 (PBZ) thin films with higher x (x=0.6, 0.7, 0.8 and 1) were investigated in detail. The results indicated that Pb0.4Ba0.6ZrO3 films possessed a moderate tunability of 32.3% and a higher figure of merit of 53.8, which were measured at 100 kHz and at room temperature. Moreover, Pb0.4Ba0.6ZrO3 films exhibited a smaller temperature coefficient of capacitance TCC-20-90= -1390 ppm/oC.

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Key Engineering Materials (Volumes 421-422)

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119-122

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https://doi.org/10.4028/www.scientific.net/KEM.421-422.119

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December 2009

Authors:

Xi Hong Hao, Ji Wei Zhai

Keywords:

Dielectric Property, PBZ Film, Structure

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