Dielectric Properties of Pb1-xBaxZrO3 Thin Films with Higher Barium Content

Abstract:

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The dc bias and temperature dependence of dielectric properties of Pb1-xBaxZrO3 (PBZ) thin films with higher x (x=0.6, 0.7, 0.8 and 1) were investigated in detail. The results indicated that Pb0.4Ba0.6ZrO3 films possessed a moderate tunability of 32.3% and a higher figure of merit of 53.8, which were measured at 100 kHz and at room temperature. Moreover, Pb0.4Ba0.6ZrO3 films exhibited a smaller temperature coefficient of capacitance TCC-20-90= -1390 ppm/oC.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

119-122

DOI:

10.4028/www.scientific.net/KEM.421-422.119

Citation:

X. H. Hao and J. W. Zhai, "Dielectric Properties of Pb1-xBaxZrO3 Thin Films with Higher Barium Content", Key Engineering Materials, Vols. 421-422, pp. 119-122, 2010

Online since:

December 2009

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Price:

$35.00

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