Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures

Y. Wongprasert; S.B. Pongsai

doi:10.4028/www.scientific.net/KEM.421-422.131

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Characteristics of Synthesized Diamond Films by...

Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures

Abstract:

This paper presents synthesized diamond films by using combustion activated chemical vapor deposition (CACVD) techniques. The characteristics of diamond films have been studied at wide ranges of temperature (30-400°C). The resistance of diamond films has been determined for hydrogen termination times of 5, 10, 15, and 20 minutes, and at the operation temperatures of 500, 600, and 700°C. The investigation found that, at 30°C a synthesized diamond film has a high resistance (1010 ), whereas at high temperatures (100-400°C) the resistance has decreased from 4.04 M to 2.42 M. The result obtained from the hydrogen termination showed that the resistance has decreased by 105-106  (at 30°C). Summarily, it can be stated that the higher the hydrogen termination times and operation temperatures, the lower the resistance of diamond films.

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Periodical:

Key Engineering Materials (Volumes 421-422)

Pages:

131-134

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.421-422.131

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Online since:

December 2009

Authors:

Y. Wongprasert, S.B. Pongsai

Keywords:

CACVD, Diamond Film, High-Temperature, Hydrogen Termination

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