Preparation of (Ba1-x, Srx)TiO3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties

Takashi Nozaka; Yoji Mizutani; Gun Bhakdisongkhram; Yuta Kawakami; Masahiro Echizen; Takashi Nishida; Hiroaki Takeda; Kiyoshi Uchiyama; Tadashi Shiosaki

doi:10.4028/www.scientific.net/KEM.421-422.127

Paper Titles

Ferroelectric Properties of Epitaxial BiFe_0.97Mn_0.03O₃ Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates
p.111

Effect of Stacking Layers on the Structure and Properties of Ca(Mg_1/3Nb_2/3)O₃ / CaTiO₃ Thin Films
p.115

Dielectric Properties of Pb_1-xBa_xZrO₃ Thin Films with Higher Barium Content
p.119

Preparation of N-Doped ZnO Films by MOCVD
p.123

Preparation of (Ba_1-x, Sr_x)TiO₃ Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties
p.127

Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures
p.131

Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy
p.135

Fabrication of Dielectric/Conductive Hybrid Artificial Superlattices Using Molecular Beam Epitaxy Method
p.139

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing
p.143

HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Preparation of (Ba1-x, Srx)TiO3 Thin Films on...

Preparation of (Ba_1-x, Sr_x)TiO₃ Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties

Abstract:

In this study, (Ba1-x,Srx)TiO3 thin films of various composition ratios were deposited on glazed Al2O3 substrates by the CSD method, and the temperature dependence of the dielectric property was analyzed. The dielectric property of the BST (80/20) thin film annealed at C was highly tunable, and the temperature dependence of the dielectric constant was stabilized at around room temperature. However, this BST (80/20) thin film exhibited intense ferroelectricity. Its tan intensified to 0.0511 in the high-frequency range (1 MHz). After the BST thin film was annealed at 600C, the grain size of the BST thin film was reduced to 40 nm and the ferroelectricity was alleviated. The dielectric constant, tan, and tunability of the BST thin film at 100 kHz were 158, 0.0170, and 39.6 (214 kV/cm, 6.0 V), respectively. The change rate of the dielectric constant, which indicates its temperature dependence, was ±7 or less in the range of -55 to 85C. Therefore, this BST thin film was considered to guarantee a wide operation temperature range for microwave tunable devices.

You might also be interested in these eBooks

Asian Ceramic Science for Electronics III and Electroceramics in Japan XII

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Pages:

127-130

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.421-422.127

Citation:

Cite this paper

Online since:

December 2009

Authors:

Takashi Nozaka, Yoji Mizutani, Gun Bhakdisongkhram, Yuta Kawakami, Masahiro Echizen, Takashi Nishida, Hiroaki Takeda, Kiyoshi Uchiyama, Tadashi Shiosaki

Keywords:

(Ba_1-xSr_x)TiO₃, Al₂O₃ Substrate, BST Thin Film, CSD Method, Dielectric Property

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] G. Bhakdisongkhram, Y. Yamashita, T. Nishida and T. Shiosaki: Jpn. J. Appl. Phys. 44 (2005) 7098-7102.

Google Scholar

[2] S. Ito, K. Takahashi, S. Okamoto, I. P. Koutsaroff, A. C. Lawry and H. Funakubo: Jpn. J. Appl. Phys. 44 (2005) 6881-6884.

Google Scholar

[3] I. P. Koutsaroff, T.A. Bernacki, M. Zelner, A. C. Lawry, T. Jimbo and K. Suu: Jpn. J. Appl. Phys. 43 (2004) 6740-6745.

DOI: 10.1143/jjap.43.6740

Google Scholar

[4] T. Nozaka, Y. Mizutani, G. Bhakdisongkhram, T. Tsuchikawa, M. Echizen, T. Nishida, H. Takeda, K. Uchiyama and T. Shiosaki: Key Eng. Mater. 388 (2009) 191-194.

DOI: 10.4028/www.scientific.net/kem.388.191

Google Scholar

[5] W. Hu, C. Yang, W. Zhang and G. Liu: Ceram. Int. 33 (2007) 1299-1303.

Google Scholar

[6] B. Su, J. E. Holmes, C. Meggs and T. W. Button: J. Euro. Ceram. Soc. 23 (2003) 2699-2703.

Google Scholar

[7] T. Nozaka, Y. Mizutani, G. Bhakdisongkhram, M. Echizen, T. Nishida, H. Takeda, K. Uchiyama and T. Shiosaki: Jpn. J. Appl. Phys. 47 (2008).

Google Scholar