Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

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We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

111-114

DOI:

10.4028/www.scientific.net/KEM.421-422.111

Citation:

H. Y. Go et al., "Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates", Key Engineering Materials, Vols. 421-422, pp. 111-114, 2010

Online since:

December 2009

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$35.00

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