Preparation of N-Doped ZnO Films by MOCVD

Abstract:

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Crystalline ZnO films were grown on Y-stabilized ZrO2 substrates heated at 300 - 600 °C in NH3 atmosphere. It is clarified from Fourier transform infrared measurements that N-doped ZnO films grown at 350 and 400 °C contain N-C and Zn-H bonds. In the devices of n-type ZnO/N-doped ZnO/Au, a good rectification characteristic is attained for an N-doped ZnO film deposited at 300°C, whereas a linear current vs. voltage characteristic is seen for a film deposited at 500 °C.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

123-126

DOI:

10.4028/www.scientific.net/KEM.421-422.123

Citation:

K. Kobayashi et al., "Preparation of N-Doped ZnO Films by MOCVD", Key Engineering Materials, Vols. 421-422, pp. 123-126, 2010

Online since:

December 2009

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Price:

$35.00

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