Preparation of N-Doped ZnO Films by MOCVD

Kenkichiro Kobayashi; Hiroki Kobayashi; Yasumasa Tomita; Yasuhisa Maeda; Yosiumi Khono

doi:10.4028/www.scientific.net/KEM.421-422.123

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Dielectric Properties of Pb_1-xBa_xZrO₃ Thin Films with Higher Barium Content
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Preparation of N-Doped ZnO Films by MOCVD
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Preparation of N-Doped ZnO Films by MOCVD

Preparation of N-Doped ZnO Films by MOCVD

Abstract:

Crystalline ZnO films were grown on Y-stabilized ZrO2 substrates heated at 300 - 600 °C in NH3 atmosphere. It is clarified from Fourier transform infrared measurements that N-doped ZnO films grown at 350 and 400 °C contain N-C and Zn-H bonds. In the devices of n-type ZnO/N-doped ZnO/Au, a good rectification characteristic is attained for an N-doped ZnO film deposited at 300°C, whereas a linear current vs. voltage characteristic is seen for a film deposited at 500 °C.

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Periodical:

Key Engineering Materials (Volumes 421-422)

Pages:

123-126

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.421-422.123

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Online since:

December 2009

Authors:

Kenkichiro Kobayashi, Hiroki Kobayashi, Yasumasa Tomita, Yasuhisa Maeda, Yosiumi Khono

Keywords:

MOCVD, N-Doping, PN Diode, p-Type ZnO

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