Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy

Ken Nishida; Minoru Osada; Shintaro Yokoyama; Takafumi Kamo; Takashi Fujisawa; Keisuke Saito; Hiroshi Funakubo; Takashi Katoda; Takashi Yamamoto

doi:10.4028/www.scientific.net/KEM.421-422.135

Paper Titles

Dielectric Properties of Pb_1-xBa_xZrO₃ Thin Films with Higher Barium Content
p.119

Preparation of N-Doped ZnO Films by MOCVD
p.123

Preparation of (Ba_1-x, Sr_x)TiO₃ Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties
p.127

Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures
p.131

Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy
p.135

Fabrication of Dielectric/Conductive Hybrid Artificial Superlattices Using Molecular Beam Epitaxy Method
p.139

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing
p.143

Growth and Electrical Properties of PbMg_0.047Nb_0.095Zr_0.416Ti_0.442O₃ Films Fabricated by Metalorganic Decomposition
p.148

Realization of Tunable Varactors Using Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films
p.153

HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Investigation of Oxygen Vacancies in...

Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy

Abstract:

Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.