Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing
After depositing amorphous (Bi0.5La0.5)(Ni0.5Ti0.5)O3 (BLNT) films on BLNT seed layer/Pt(100)/ MgO(100) substrates by room-temperature sputtering, the crystallization of the perovskite-struc- tured films has been tried by hot isostatic pressing (HIP). The samples with a single-phase perovskite structure HIP-treated at 800°C for 1 h under gas pressures of 0.51.0 MPa showed good crystallinity of = 0.960.98 without accompanying the precipitation of the secondary phase. It was confirmed that a large root mean square roughness value of 44.2 nm for the sample HIP-treated at 800°C for 1 h under gas pressure of 0.1 MPa is due to innumerable Bi4Ti3O12-like rod-shaped grains precipitated in the film surface, based on atomic force microscopy. It is shown that the BLNT sample HIP-treated at 800°C for 1 h under gas pressure of 1.0 MPa exhibits the best hysteresis loop shape with a remanent polarization of Pr = 5 C/cm2 and a coercive field of Ec = 150 kV/cm of the six.
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
M. Kobune et al., "Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing", Key Engineering Materials, Vols. 421-422, pp. 143-147, 2010