Growth and Electrical Properties of PbMg0.047Nb0.095Zr0.416Ti0.442O3 Films Fabricated by Metalorganic Decomposition

Abstract:

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On the basis of experimental data on the piezoelectric pinpoint composition of ceramics of the ternary system Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3 (PMNZT), which we investigated in our previous report, epitaxial PbMg0.047Nb0.095Zr0.416Ti0.442O3 thick films with thicknesses ranging from 0.4 to 1.9 m were fabricated on Pt(100)/MgO(100) substrates by metalorganic decomposition. The film- thickness dependence on the structural and electrical properties (dielectric, piezoelectric and ferroelectric properties) was investigated. All PMNZT films exhibited a highly uniform (001) orientation, regardless of the film thickness. The cross-sectional transmission electron microscope micrographs and all the physical data suggest that high-density PMNZT thick films with a thickness  1.0 m can be expected to function as highly electrically insulating capacitors with high potential for piezo- and ferroelectric applications.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

148-152

DOI:

10.4028/www.scientific.net/KEM.421-422.148

Citation:

Y. Hasegawa et al., "Growth and Electrical Properties of PbMg0.047Nb0.095Zr0.416Ti0.442O3 Films Fabricated by Metalorganic Decomposition", Key Engineering Materials, Vols. 421-422, pp. 148-152, 2010

Online since:

December 2009

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$35.00

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