A Silicon Micro-Accelerometer with Triangle Cross-Section Beam by Anisotropic Wet Etching in TMAH Solution

Article Preview

Abstract:

A capacitive accelerometer with triangle cross-section beam fabricated by anisotropic wet etching of (100) silicon is presented in this paper. The feature of this accelerometer is that eight suspension beams with triangle cross-section are formed by anisotropic wet etching of (100) silicon in TMAH solution, without heavy boron doping or Si-Si bonding. When the width of beam is decided, the beam’s geometry is determinate. The formation procedure of the triangle cross-section beam is analyzed in detail. Through this beam-fabrication approach, the beam’s thickness can be well controlled by beam’s width and intrinsic stress in the beams is minimized. Accelerometers with different sensitivities can be easily fabricated by varying the width of the beams. For a device with 23 μm width beams, the resonance frequency and the quality factor are 644 Hz and 32, respectively. The sensitivity of accelerometer is measured as 2 V•g-1.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

151-155

Citation:

Online since:

February 2012

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Yazdi N, Ayazi F and Najafi K: Micromachined Inertial Sensors. Proceedings of the IEEE Vol. 86 (1998), pp.1640-1659.

DOI: 10.1109/5.704269

Google Scholar

[2] F. Rudolf, A. Jornod, J. Berqvist, and H. Leuthold: Precision accelerometers with μg resolution. Sensors and Actuators Vol. A21 (1990), p.297–302.

DOI: 10.1016/0924-4247(90)85059-d

Google Scholar

[3] J. Bernstein, R. Miller, W. Kelley, and P. Ward: Low-noise MEMS vibration sensor for geophysical applications. Journal of microelectromechanical systems Vol. 8(1999), p.433–438.

DOI: 10.1109/84.809058

Google Scholar

[4] C. Liu, A. M. Brazilai, J. K. Reynolds, et al: Characterization of a high-sensitivity micromachined tunneling accelerometer with micro-g resolution. Journal of microelectromechanical systems Vol. 7(1998), p.235–244.

DOI: 10.1109/84.679388

Google Scholar

[5] M. A. Schmidt: Wafer-to-wafer bonding for microstructure formation. Proceedings of the IEEE Vol. 86(1998), p.1575–1585.

DOI: 10.1109/5.704262

Google Scholar

[6] Li G, Li Z, Wang C, Hao Y, Li T, Zhang D and Wu G: Design and fabrication of a highly symmetrical capacitive triaxial accelerometer. Journal of Micromechanics and Microengineering 11(2001), pp.48-54.

DOI: 10.1088/0960-1317/11/1/308

Google Scholar

[7] R. P. Van Kampen and R. F. Wolffenbuttel: Modeling the mechanical behavior of bulk-micromachined silicon accelerometers. Sensors and Actuators Vol. A64(1998), p.137–50.

DOI: 10.1016/s0924-4247(98)80007-1

Google Scholar

[8] Fei Xiao, Lufeng Che, et al: A novel capacitive accelerometer with an eight-beam-mass structure by self-stop anisotropic etching of (100) silicon. Journal of Micromechanics and Microengineering 18(2008), pp.1-7.

DOI: 10.1088/0960-1317/18/7/075005

Google Scholar

[9] Xiaofeng Zhou, Lufeng Che, et al: Single wafer fabrication of a symmetric double-sided beam–mass structure using DRIE and wet etching by a novel vertical sidewall protection technique. Journal of Micromechanics and Microengineering 20(2010).

DOI: 10.1088/0960-1317/20/11/115009

Google Scholar

[10] K. Biswas and S. Kal: Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon. Microeletronic Journal 37(2006), pp.519-525.

DOI: 10.1016/j.mejo.2005.07.012

Google Scholar