A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

Ey Goo Kang

doi:10.4028/www.scientific.net/KEM.730.102

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 730A Study of Oxide Etch Angle of Edge Termination...

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

Abstract:

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

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Periodical:

Key Engineering Materials (Volume 730)

Pages:

102-105

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.730.102

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Online since:

February 2017

Authors:

Ey Goo Kang*

Keywords:

Edge Termination, Field Plate, Oxide Etch Angle, Power Semiconductor, SiC SBD

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References

[1] G. Majumdar, T. Minato, Recent and future IGBT evolution, Power Conversion Conference proceedings, (2007), pp.355-359.

DOI: 10.1109/pccon.2007.372992

Google Scholar

[2] B. J. Baliga, Advanced Power Rectifier Concepts, (2008).

Google Scholar

[3] B. J. Baliga, Power semiconductor devices, PWS Publishing Company, (1996).

Google Scholar

[4] B. Q. Tang, Y. M. Gao, J. S. Luo, The quasi-three-dimensional optimum analysis of breakdown voltage of floating field-limiting rings, Solid-Stage Electron. 41(11) (1997) 1821.

DOI: 10.1016/s0038-1101(97)00151-2

Google Scholar

[5] S. M. Sze, G. Gibbons, Effect of junction curvature on breakdown voltage in semiconductors, Solid-State Electron. 9 (1966) 831.

DOI: 10.1016/0038-1101(66)90033-5

Google Scholar