Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

Philip G. Neudeck; David J. Spry; Dorothy Lukco; Liang Yu Chen

doi:10.4028/p-cbw76g

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 948Early Burn-In Parasitic Conduction in 500 °C...

Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

Abstract:

All prior reports of long-term 500 °C operation of SiC JFET-R ICs have noted the existence of an initial “burn-in” period of changes in measured electrical characteristics for the first few hundred hours oven-testing. This work reports measurements of “burn-in parasitic MOSFET conduction” that can substantially impact the performance of some circuits during initial heat-up of JFET ICs, but then subsequently disappears after a few hours of operation at 500 °C. The behavior appears generally consistent with the known MOS phenomenon of bias-temperature driven redistribution of mobile ionic contamination. Approaches for further mitigating this initial burn-in conduction mechanism are discussed.

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Periodical:

Key Engineering Materials (Volume 948)

Pages:

77-82

DOI:

https://doi.org/10.4028/p-cbw76g

Citation:

Cite this paper

Online since:

June 2023

Authors:

Philip G. Neudeck*, David J. Spry, Dorothy Lukco, Liang Yu Chen

Keywords:

Burn-In, Field-FET, Integrated Circuit, JFET, Mobile Ions, Parasitic MOSFET

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

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