Semiconductor TiO2 Coating Deposited by Microwave Plasma Method
p.57
p.57
Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
p.69
p.69
Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs
p.77
p.77
Optimization of TaSi2 Processing for 500 °C Durable SiC JFET-R Integrated Circuits
p.83
p.83
High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow VGS(on)
p.89
p.89
650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout
p.95
p.95
Investigations on 4H-SiC Low Voltage nMOSFETs with Thin Thermal SiO2/ Deposited Oxide Gate Dielectric
p.101
p.101
Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates
p.107
p.107
Evaluation of the Alkali-Aggregate Reaction Mitigation Potential of Alkali-Activated Fly Ash-Based Matrices Containing Different Reactive Aggregates
p.117
p.117
High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow VGS(on)
Abstract:
SiC MOSFETs are rarely used in low-power consumer applications because of their cost and gate driving circuitry requirement. In this work, a cost-efficient SiC MOSFET with a usable 10V of VGS is proposed. The proposed SiC MOSFET could enable low-power applications, which is around tens to hundreds of watt, to implement SiC MOSFETs. As a result, the thermal performance is better than the GaN solution thanks to the better thermal conductance of the SiC.
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Periodical:
Key Engineering Materials (Volume 948)
Pages:
89-93
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Online since:
June 2023
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