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Investigations on 4H-SiC Low Voltage nMOSFETs with Thin Thermal SiO2/ Deposited Oxide Gate Dielectric

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Abstract:

The poor quality of SiC/SiO2 interface significantly limits the channel mobility, especially in 4H-SiC MOSFETs. Several strategies have been addressed to overcome this issue. Nitridation by NO has been adopted widely by manufactures because nitrogen may replace carbon in some chemical bond at the SiC/SiO2 interface. However, excessive nitridation is not desirable because of pronounced hole-trapping effects near the conduction band. As an alternative gate dielectric, thin SiO2/deposited oxide stack has been investigated in 4H-SiC lateral nMOSFETs. Overall performances were reviewed in aspects of transfer/gm/reverse characteristics, charge pumping method and TLP characteristics.

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Info:

Periodical:

Key Engineering Materials (Volume 948)

Pages:

101-105

DOI:

https://doi.org/10.4028/p-968y4h

Citation:

Cite this paper

Online since:

June 2023

Authors:

Kevin Kyu Heon Cho*, Brian Lee, Ki Min Kim, Doo Jin Choi, Kyeong Seok Park

Keywords:

4H-SiC, Carbon Cluster, Channel Mobility, Charge Pumping, Deposited Gate Oxide, Interface State Density, Low Voltage nMOSFETs, TLP

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Creative Commons CC BY 4.0

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* - Corresponding Author

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