Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

Xiang Zhou; Collin W. Hitchcock; Reza Ghandi; Alexander Bolotnikov; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.1004.939

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A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes
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Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes
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Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Dynamic Switching of 3kV 4H-SiC Charge-Balanced...

Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

Abstract:

We have performed detailed dynamic switching measurements for 3kV 4H-SiC Charge-Balanced (CB) junction barrier Schottky (JBS) diodes [1,2] and studied their dependence on device design parameters. We have done forward and reverse recovery characterizations and found unusual switching characteristics in these CB-JBS diodes. These switching characteristics are explained based on the design and layout of the devices.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

939-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.939

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Online since:

July 2020

Authors:

Xiang Zhou*, Collin W. Hitchcock, Reza Ghandi, Alexander Bolotnikov, T. Paul Chow

Keywords:

4H-SiC, Charge-Balanced Junction Barrier Schottky (JBS) Diode, High Energy Implantation, High Voltage

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