Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices

Abstract:

In this work, the three most common lifetime models for power semiconductors i.e. LESIT, CIPS08 and SKiM63 are investigated regarding their applicability for SiC power devices. For this reason, multiple power cycling tests with a large number of devices were performed. The results show that those models can properly reflect the power cycling test results of SiC power semiconductors for higher temperature swings if the model parameter are properly adjusted. However, they show a significant error for lower temperature swings and drastically underestimate the lifetime. This indicates that the inferior power cycling performance of SiC power devices compared to silicon at high temperature swings does not necessarily imply that the service life is affected in the same order of magnitude.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 977-984
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.977
• Online since: July 2020
• Authors: Felix Hoffmann*, Nando Kaminski
• Keywords: Lifetime Modeling, MOSFET, Power Cycling, Reliability, SiC

References

[1] C. Herold, M. Schaefer, F. Sauerland, T. Poller, J. Lutz, and O. Schilling. Power cycling capa­ bility of Modules with SiC­Diodes. In CIPS 2014; 8th International Conference on Integrated Power Electronics Systems.

[2] M. Held, P. Jacob, G. Nicoletti, P. Scacco, and M. . Poech. Fast power cycling test of igbt modules in traction application. In Proceedings of Second International Conference on Power Electronics and Drive Systems, volume 1, pages 425-430 vol.1.

DOI: 10.1109/peds.1997.618742

[3] R. Bayerer, T. Herrmann, T. Licht, J. Lutz, and M. Feller. Model for Power Cycling lifetime of IGBT Modules ­ various factors influencing lifetime. In 5th International Conference on Inte­ grated Power Electronics Systems.

DOI: 10.1109/epe.2007.4417702

[4] Uwe Scheuermann and Ralf Schmidt. A new lifetime model for advanced power modules with sintered chips and optimized al wire bonds. In Proceedings of PCIM Europe 2013; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and En­ ergy Management.

[5] A. Otto, E. Kaulfersch, S. Frankeser, K. Brinkfeldt, O. Zschieschang, and S. Rzepka. Reliability investigation on sic bjt power module. In PCIM Europe 2016; International Exhibition and Con­ ference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management.

DOI: 10.1007/978-3-319-08087-1_21

[6] D. A. Gajewski, B. Hull, D. J. Lichtenwalner, S. H. Ryu, E. Bonelli, H. Mustain, G. Wang, S. T. Allen, and J. W. Palmour. SiC power device reliability. In 2016 IEEE International Integrated Reliability Workshop (IIRW), pages 29-34.

DOI: 10.1109/iirw.2016.7904895

[7] F. Hoffmann and N. Kaminski. Evaluation of the VSD­Method for Temperature Estimation Dur­ ing Power Cycling of SiC­MOSFETs. In 2019 IET Power Electronics, in press.

[8] R. Boldyrjew­Mast, D. Kretzschmar, J. Franke, and J. Lutz. Reliability test results of pcb sol­ dered gan git devices. In PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pages 1-8.

[9] Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. Semiconductor Power Devices: Physics, Characteristics, Reliability. Springer.

DOI: 10.1007/978-3-642-11125-9