A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes

Collin W. Hitchcock; Xiang Zhou; Gyanesh Pandey; Reza Ghandi; Alexander Bolotnikov; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.1004.945

Paper Titles

Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well
p.917

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons
p.923

Short Circuit Ruggedness of 600 V SiC Trench JFETs
p.933

Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes
p.939

A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes
p.945

Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes
p.953

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes
p.960

Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices
p.977

Stress Test of Cascode Switch Using SiC Static Induction Transistor
p.985

HomeMaterials Science ForumMaterials Science Forum Vol. 1004A Subcircuit SPICE Model for SiC Charge-Balance...

A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes

Abstract:

The electrical behavior of silicon carbide charge-balance (CB) Schottky/JBS diodes is examined. Based on the observed electrical characteristics, a subcircuit SPICE model for the experimental devices is proposed and validated against the data. The proposed model consists of a standard SPICE diode with custom parameters along with a network of discrete resistive and reactive subcircuit elements required to replicate the complex static and dynamic behavior of the experimental devices. With proper selection of component values, static, dynamic, and temperature-dependent device behavior are well modelled from room temperature to 150°C.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2019

View Preview

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

945-952

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.945

Citation:

Cite this paper

Online since:

July 2020

Authors:

Collin W. Hitchcock*, Xiang Zhou, Gyanesh Pandey, Reza Ghandi, Alexander Bolotnikov, T. Paul Chow

Keywords:

Charge Balance Diode, Schottky Diode, SiC Diode, SPICE Model, Superjunction Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] A. Bolotnikov, P. Losee, R. Ghandi, S. Kennerly, R. Datta, X. She, ECSCRM 2018, Mat. Sci. For., 963, 655 (2019).

DOI: 10.4028/www.scientific.net/msf.963.655

Google Scholar

[2] R. Ghandi, A. Bolotnikov, D. Lilienfeld, S. Kennerly and R. Ravisekhar, Proc. 31st ISPSD, 179, (2019).

DOI: 10.1109/ispsd.2019.8757568

Google Scholar

[3] G. Buiatti, F. Cappelluti, and G. Ghione, IEEE Trans. Ind. App., 43, 911 (2007).

Google Scholar

[4] A. Aruajo, A. Carvalho and J. L. M. De Carvalho, Power p-i-n diode modeling using SPICE," ISIE ,97 Proceeding of the IEEE International Symposium on Industrial Electronics, Guimaraes, Portugal, 1997, pp.211-216 vol.2,.

DOI: 10.1109/isie.1997.648937

Google Scholar

[5] P. Leturcq, M. O. Berraies and J. -. Massol, Implementation and validation of a new diode model for circuit simulation,, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference, Baveno, Italy, 1996, pp.35-43 vol.1,.

DOI: 10.1109/pesc.1996.548556

Google Scholar