Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

Olfa Karker; Konstantinos Zekentes; Aude Bouchard; Isabelle Gélard; Xavier Mescot; Valerie Stambouli; Edwige Bano

doi:10.4028/p-23d7ab

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Modelling and Development of 4H-SiC...

Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

Abstract:

A SiCNWFET device serving as a biosensor was designed and simulated using Silvaco ATLAS device simulation software. The performance of the designed device in charges sensing was investigated. The device shows the ability to recognize different interface charge values ranging from-1.10E11 to-5.10E12 cm^-2applied on the surface of the silicon carbide nanowire channel to simulate target charge biomolecules that bound to the biosensor. A significant change in the output current is observed due to the presence of different values of fixed interface charge densities. An optimum, according to the TCAD simulation, the 4H-SiC epitaxial structure has been grown. The designed device was fully fabricated on this structure and it exhibited acceptable electrical characteristics.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

608-612

DOI:

https://doi.org/10.4028/p-23d7ab

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Online since:

May 2022

Authors:

Olfa Karker*, Konstantinos Zekentes, Aude Bouchard, Isabelle Gélard, Xavier Mescot, Valerie Stambouli, Edwige Bano

Keywords:

Biosensor, DNA, NWFET, Silicon Carbide, TCAD Simulation

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* - Corresponding Author

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