On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts

Nazareno Donato; Kaloyan Naydenov; Florin Udrea; Andrei Mihaila; Gianpaolo Romano; Stephan Wirths; Lars Knoll

doi:10.4028/p-fnekfr

Paper Titles

Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures
p.608

Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs
p.613

Thermal Simulations of a New SiC Detector Design for Neutron Measurements in JSI Nuclear Research Reactor
p.619

Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
p.627

On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts
p.632

Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field
p.637

Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs
p.642

Temperature Dependence of On-State Inter-Terminal Capacitances (C_gd and C_gs) of SiC MOSFETs and Frequency Limitations of their Measurements
p.647

SiC MOSFET C-V Characteristics with Positive Biased Drain
p.653

HomeMaterials Science ForumMaterials Science Forum Vol. 1062On the Short Circuit Electro-Thermal Failure of...

On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts

Abstract:

In this manuscript, the short circuit (SC) capability of 1.2 kV vertical double diffused SiC MOSFET with different layout topologies is investigated. 3D finite element electro-thermal simulations have been carried out in order to assess the performance of five different cell topologies. It has been found that while the maximum drain current density observed during a SC event agrees well with the specific on-state resistance behaviour, the maximum temperature evolution in the unit cell follows the opposite trend. This behaviour can be explained by the relatively poor spreading of the carriers in the JFET region (of the ALL) at small cell pitches (~ 8um), which can lead to the formation of a filament with a high current density and heat generation.

By email View Pdf

You have full access to the following eBook

Silicon Carbide and Related Materials 2021

Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

632-636

DOI:

https://doi.org/10.4028/p-fnekfr

Citation:

Cite this paper

Online since:

May 2022

Authors:

Nazareno Donato*, Kaloyan Naydenov, Florin Udrea, Andrei Mihaila, Gianpaolo Romano, Stephan Wirths, Lars Knoll

Keywords:

3D Cell Geometry, Short Circuit Robustness, SiC MOSFET, TCAD Modelling

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] Adan, Alberto O., et al. The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer's Perspective., IEEE Power Electronics Magazine 6.2 (2019): 36-47.

DOI: 10.1109/mpel.2019.2909592

Google Scholar

[2] Agarwal et al.. Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs,. IEEE Electron Device Letters, 40(5), 773-776.

DOI: 10.1109/led.2019.2908078

Google Scholar

[3] Romano, Gianpaolo, et al. A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs., IEEE Journal of Emerging and Selected Topics in Power Electronics 4.3 (2016): 978-987.

DOI: 10.1109/jestpe.2016.2563220

Google Scholar

[4] Baliga, B. Jayant. Fundamentals of power semiconductor devices. Springer Science & Business Media, (2010).

Google Scholar

[5] Tsibizov, Alexander, et al. IEEE Transactions on Power Electronics 35.2 (2019): 1855-1865.

Google Scholar

[6] Wachutka, G. K., Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling., IEEE Trans. Comput-Aided Des. Integr. Circuits Syst., 9(11), 1141-1149, 1990.

DOI: 10.1109/43.62751

Google Scholar

[7] M. Cutler and N. F. Mott, Observation of Anderson Localization in an Electron Gas.,, Physical Review, 181(3), 1336-1340, (1969).

DOI: 10.1103/physrev.181.1336

Google Scholar