Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Ali Ammar; Luong Viet Phung; Dominique Planson; Hervé Morel; Camille Sonneville

doi:10.4028/p-vms03o

Paper Titles

A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers
p.593

Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs
p.598

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate
p.603

Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures
p.608

Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs
p.613

Thermal Simulations of a New SiC Detector Design for Neutron Measurements in JSI Nuclear Research Reactor
p.619

Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
p.627

On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts
p.632

Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field
p.637

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Design and Methodology of Silicon Carbide High...

Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Abstract:

An optimized termination extension tutorial is reported for a small area (≈ 1mm² ) 4H-SiC NPN BJT. The extension system is based on a parametric JTE with isolation rings. Additional aspects such as (1) MESA angle, (2) relieving electric field on the base-drift junction, and (3) blocking the electric field from reaching border structure are investigated. A breakdown voltage greater than 10 kV is recorded, when drift region is n-doped to 8x10¹⁴ cm-3.

By email View Pdf

You have full access to the following eBook