Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts

Kaloyan Naydenov; Nazareno Donato; Florin Udrea; Andrei Mihaila; Gianpaolo Romano; Stephan Wirths; Lars Knoll

doi:10.4028/p-s1v84y

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Clamped and Unclamped Inductive Switching of 3.3...

Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts

Abstract:

This work presents for the first time a comparative numerical study on the performance of planar 3.3 kV SiC MOSFETs during clamped and unclamped inductive switching for various cell layouts and pitches. It is demonstrated that despite its larger on-state losses, the atomic lattice layout (ALL) incurs smaller switching losses than the stripe and the circular designs for all examined cell pitches. Conversely, while the ALL does turn off earlier than the other layouts during UIS, the decrease in the peak lattice temperature that it brings is predicted to be marginal if just a single unit cell is considered.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

627-631

DOI:

https://doi.org/10.4028/p-s1v84y

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Online since:

May 2022

Authors:

Kaloyan Naydenov*, Nazareno Donato, Florin Udrea, Andrei Mihaila, Gianpaolo Romano, Stephan Wirths, Lars Knoll

Keywords:

Cell Geometry, Inductive Switching, SiC MOSFET, TCAD Modelling, UIS

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* - Corresponding Author

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