Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field

Fatme Abed Ali; Yvan Avenas; Pierre Lefranc; Pierre Olivier Jeannin; Hadi Alawieh; Toni Youssef; Hassan Moussa

doi:10.4028/p-gvcp58

Paper Titles

Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs
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Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
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On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts
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Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field
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Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Design of an Integrated Power Module for Silicon...

Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field

Abstract:

Compactness, efficiency, and light weight are the key topics in the design of power conversion systems for transportation applications. This demand is achievable by using wide band gap devices such as SiC devices, characterized by the high switching speed and low on-resistance. However, this trend imposes new challenges and the effect of parasitic elements of power package during switching transient becomes significant. Hence, new packaging solutions should be investigated for addressing this concern. This paper presents a new multichip power module architecture, where its design considering capacitive and inductive stray elements is carried out. Using Ansys Q3D Extractor, electromagnetic simulations are achieved to extract the inductive and capacitive parasitic element of one leg of a three-phase inverter.

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Silicon Carbide and Related Materials 2021

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

637-641

DOI:

https://doi.org/10.4028/p-gvcp58

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Online since:

May 2022

Authors:

Fatme Abed Ali*, Yvan Avenas, Pierre Lefranc, Pierre Olivier Jeannin, Hadi Alawieh, Toni Youssef, Hassan Moussa

Keywords:

High Power Density, Multichip Power Module, Package Design, Parasitic Element, Silicon Carbide

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References

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