A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs

Alessandro Borghese; Michele Riccio; Luca Maresca; Giovanni Breglio; Slavo Kicin; Andrea Irace

doi:10.4028/p-278mb0

Paper Titles

Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field
p.637

Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs
p.642

Temperature Dependence of On-State Inter-Terminal Capacitances (C_gd and C_gs) of SiC MOSFETs and Frequency Limitations of their Measurements
p.647

SiC MOSFET C-V Characteristics with Positive Biased Drain
p.653

A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs
p.658

SiC MOSFET C-V Curves Analysis with Floating Drain Configuration
p.663

Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs
p.669

Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress
p.676

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment
p.683

HomeMaterials Science ForumMaterials Science Forum Vol. 1062A Scalable SPICE-Based Compact Model for 1.7 kV...

A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs

Abstract:

This paper presents a compact model implemented in SPICE environment for silicon carbide (SiC) MOSFET. The model is easily adjustable to devices belonging to different voltage and current ratings. A previous release of the model was tuned to match the performance of 1.2 kV and 3.3 kV SiC MOSFETs, while, in this contribution, an improved version of the compact model is calibrated for 1.7 kV devices. The agreement between the experimental and simulated data, achieved for both static and dynamic conditions, associated to the model simulation speed, emphasize its suitability as a tool for the simulation of converter containing wide arrangements of devices.

By email View Pdf

You have full access to the following eBook

Silicon Carbide and Related Materials 2021

Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

658-662

DOI:

https://doi.org/10.4028/p-278mb0

Citation:

Cite this paper

Online since:

May 2022

Authors:

Alessandro Borghese*, Michele Riccio, Luca Maresca, Giovanni Breglio, Slavo Kicin, Andrea Irace

Keywords:

Compact Modeling, Power Module, SiC-MOSFET, SPICE

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] L. Spaziani and L. Lu, Silicon, GaN and SiC: There's room for all: An application space overview of device considerations,, in Proc. IEEE ISPSD, 2018,.

DOI: 10.1109/ispsd.2018.8393590

Google Scholar

[2] B. W. Nelson et al., Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior,, in IEEE OJ-PEL, vol. 1, pp.499-512, 2020,.

Google Scholar

[3] B. W. Nelson et al., Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior,, in IEEE OJ-PEL, vol. 2, pp.106-123, 2021,.

Google Scholar

[4] M. Riccio, et al., A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations,, in in Proc. IEEE ISPSD, vol. 33, no. 9, pp.8020-8029, Sept. 2018,.

DOI: 10.1109/tpel.2017.2774764

Google Scholar

[5] A. Borghese et al., An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable for High-Current Modules Design,, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, pp.215-218,.

DOI: 10.1109/ispsd.2019.8757576

Google Scholar

[6] A. Borghese et al., Effect of Parameters Variability on the Performance of SiC MOSFET Modules,, in Proc. IEEE ESARS-ITEC, 2018,.

Google Scholar

[7] ON Semiconductor, Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices,, TND6260/DRev. 2021, 2. Available online: https://www.onsemi.com/pub/Collateral/TND6260-D.PDF (accessed on 07 October 2021).

Google Scholar

[8] C. Scognamillo, et al., Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics,, Energies, vol. 14, no. 15, p.4683, Aug. 2021. Available: http://dx.doi.org/10.3390/en14154683.

DOI: 10.3390/en14154683

Google Scholar