Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs

Ilaria Matacena; Luca Maresca; Michele Riccio; Andrea Irace; Giovanni Breglio; Santolo Daliento

doi:10.4028/p-bzki64

Paper Titles

Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs
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Temperature Dependence of On-State Inter-Terminal Capacitances (C_gd and C_gs) of SiC MOSFETs and Frequency Limitations of their Measurements
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SiC MOSFET C-V Characteristics with Positive Biased Drain
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A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs
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SiC MOSFET C-V Curves Analysis with Floating Drain Configuration
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Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs
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Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress
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Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment
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Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Experimental Analysis of C-V and I-V Curves...

Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs

Abstract:

SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO₂ interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

669-675

DOI:

https://doi.org/10.4028/p-bzki64

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Online since:

May 2022

Authors:

Ilaria Matacena*, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento

Keywords:

Capacitance, Hysteresis, Planar, SiC MOSFET, Trench

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Creative Commons CC BY 4.0

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* - Corresponding Author

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