Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress

Yusuke Yamashiro; Masakazu Okada; Masakazu Baba; Takanori Tanaka; Shingo Tomohisa; Hiroshi Watanabe; Kazutoshi Kojima; Shinsuke Harada; Hiroshi Yamaguchi

doi:10.4028/p-794hb3

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Behavior of Shockley-Type Stacking Faults in SiC...

Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress

Abstract:

We evaluated stacking faults expanding by body diode current stress in the SiC Semi-SJ MOSFET for the first time. It was found that body diode degradation of the SJ MOSFETs tends to be smaller than that of conventional Non-SJ MOSFETs. Detailed crystal evaluations revealed that the stacking faults did not expand into the SJ structure. It is assumed that the expansion stops due to low carrier densities. The result suggests that the SJ device has a high potential as a device for suppressing the body diode degradation.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

676-682

DOI:

https://doi.org/10.4028/p-794hb3

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Online since:

May 2022

Authors:

Yusuke Yamashiro*, Masakazu Okada, Masakazu Baba, Takanori Tanaka, Shingo Tomohisa, Hiroshi Watanabe, Kazutoshi Kojima, Shinsuke Harada, Hiroshi Yamaguchi

Keywords:

Body Diode, Photoluminescence, Stacking Fault, Super Junction

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* - Corresponding Author

References

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