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Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
p.17
Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
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New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
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Process Gas Control for High-Resistance HPSI-SiC Growth
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High-Temperature Adhesive Bonding of 4H-SiC Substrates
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New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
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SmartSiC™ 150 & 200mm Engineered Substrate: Enabling SiC Power Devices with Improved Performances and Reliability
p.65
Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces
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Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
p.83

Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components

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Abstract:

This work discusses three aspects of the PVT growth process to reach a higher SiC crystal yield: (i) Type of carbon isolation material and procedure to maintain reproducible growth conditions from one process to the next. (ii) The pros and cons of temperature and power control (or a mixture of both) during the SiC crystal growth phase of the PVT process; and (iii) the selection of a set of process parameters and the specifications of the grown SiC crystal, which serve as a fingerprint of reproducible growth conditions (related to the selection and design of hot zone isolation components).

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Periodical:

Materials Science Forum (Volume 1156)

Pages:

83-92

DOI:

https://doi.org/10.4028/p-qcdYf7

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Cite this paper

Online since:

September 2025

Authors:

Sven Strüber, Jonas Ihle, Julian Zöcklein, Johannes Steiner, Peter J. Wellmann*

Keywords:

Bulk Growth, Physical Vapor Transport, PVT, Yield

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* - Corresponding Author

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