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Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces
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Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
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Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components

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Abstract:

This work discusses three aspects of the PVT growth process to reach a higher SiC crystal yield: (i) Type of carbon isolation material and procedure to maintain reproducible growth conditions from one process to the next. (ii) The pros and cons of temperature and power control (or a mixture of both) during the SiC crystal growth phase of the PVT process; and (iii) the selection of a set of process parameters and the specifications of the grown SiC crystal, which serve as a fingerprint of reproducible growth conditions (related to the selection and design of hot zone isolation components).

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Periodical:

Materials Science Forum (Volume 1156)

Pages:

83-92

DOI:

https://doi.org/10.4028/p-qcdYf7

Citation:

Cite this paper

Online since:

September 2025

Authors:

Sven Strüber, Jonas Ihle, Julian Zöcklein, Johannes Steiner, Peter J. Wellmann*

Keywords:

Bulk Growth, Physical Vapor Transport (PVT), Yield

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* - Corresponding Author

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