Impacts of Wafer Thinning Process Using Laser Slice Technique on Silicon Carbide Device Characteristics
p.25
p.25
A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-Based Devices
p.33
p.33
Damage-Free Dicing of SiC Substrate Using High-Pressure SF6 Plasma: The Time Dependence of Processed Groove Profiles
p.41
p.41
Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
p.47
p.47
Impact of Ambient Conditions on Oxide Thickness Distribution on 4H-SiC in Thermal Oxidation Furnace
p.55
p.55
Strain Relief of Silicon Carbide Substrates(4H-SiC) by Wet Etching
p.63
p.63
CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
p.69
p.69
BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
p.77
p.77
Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer
p.83
p.83
Impact of Ambient Conditions on Oxide Thickness Distribution on 4H-SiC in Thermal Oxidation Furnace
Abstract:
4H-SiC wafers were processed in thermal oxidation furnace and impact of oxidation temperature up to 1500 °C, processing pressure and different gaseous ambient on oxide thickness distribution was investigated. Beside the impact of thermal distribution within oxidation furnace, an additional effect on oxide thickness distribution has been observed, due to promotion of oxidation rate in the center of the wafer. Within this work, we have examined which influence processing parameters have on described effect, specific for SiC oxidation.
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Periodical:
Materials Science Forum (Volume 1193)
Pages:
55-61
DOI:
https://doi.org/10.4028/p-np1tSH
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Online since:
May 2026
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