Paper Titles
Preface
Comparative Study on Grinding Behavior of C-Face and Si-Face in Laser-Sliced 4H-SiC Wafers
p.1
Effects of Processing Passes on Laser-Sliced SiC
p.9
Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques
p.19
Impacts of Wafer Thinning Process Using Laser Slice Technique on Silicon Carbide Device Characteristics
p.25
A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-Based Devices
p.33
Damage-Free Dicing of SiC Substrate Using High-Pressure SF6 Plasma: The Time Dependence of Processed Groove Profiles
p.41
Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
p.47
Impact of Ambient Conditions on Oxide Thickness Distribution on 4H-SiC in Thermal Oxidation Furnace
p.55

Impacts of Wafer Thinning Process Using Laser Slice Technique on Silicon Carbide Device Characteristics

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Abstract:

A laser slicing technique is an attractive alternative to grinding for thinning SiC wafers. This method has the potential to enable the reutilization of SiC wafers and reduce the waste generated during the grinding process. This paper comprehensively investigates the technical feasibility of laser slicing for the fabrication of SiC power devices. SiC JBS samples fabricated with laser irradiation revealed that by selecting the appropriate laser conditions, we can employ the technique without adversely affecting the JBS leakage current characteristics. Additionally, we fabricated SiC MOSFETs through wafer thinning using the laser slicing technique. The key electrical characteristics of the MOSFETs, including IGSS, IDSS, Vth and VDS(on), showed no differences compared to those fabricated using conventional grinding. These results indicate that laser slicing is a highly promising thinning technique for the fabrication of SiC power devices.

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Periodical:

Materials Science Forum (Volume 1193)

Pages:

25-32

DOI:

https://doi.org/10.4028/p-lQ20LA

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Cite this paper

Online since:

May 2026

Authors:

Kyohei Akiyoshi*, Takanori Tanaka, Shunta Takahashi, Kazumasa Iwanaga, Kenichi Hamano, Akihiko Furukawa

Keywords:

JBS Diode, Laser Slice, MOSFET, Recycling Wafer, Reutilization Process, SiC Wafer

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Creative Commons CC BY 4.0

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References

[1] T. Kimoto, Jpn. J. Appl. Phys., 54, 040103 (2015).

Google Scholar

[2] X. Yu, W. Wu, B. Li, X. Xiu, Y. Zheng, and R. Zhang, Appl. Surf. Sci., 697, 163014 (2025).

Google Scholar

[3] G. Shang, H. Wang, H. Huang, and R. Kang, Int. J. Mech. Sci., 247, 108147 (2023).

Google Scholar

[4] Y. Lu, X. Li, B. Chen, X. Zhang, X. Li, Y. Wang, Y. Chen, M. Wang, and S. Wang, Opt. Express, 33(16), 33456 (2025).

DOI: 10.1364/oe.568553

Google Scholar

[5] K. Hirata, Proc. of SPIE, 10520, 1052003 (2018).

Google Scholar

[6] T. Ishida, T. Ushijima, S. Nakabayashi, K. Kato, T. Koyama, Y. Nagasato, J. Ohara, S. Hoshi, M. Nagaya, K. Hara, T. Kanemura, M. Taki, T. Yui, K. Hara, D. Kawaguchi, K. Kuno, T. Osajima, J. Kojima, T. Uesugi, A. Tanaka, C. Sasaoka, S. Onda, and J. Suda, Appl. Phys. Express, 17, 026501 (2024).

DOI: 10.35848/1882-0786/ad269d

Google Scholar

[7] A. Martychowiec, N. Kwietniewski, K. Kondracka, A. Werbowy, and M. Sochacki, Proc. of SPIE, 11581, 115810W (2020).

Google Scholar