Paper Titles
Preface
Comparative Study on Grinding Behavior of C-Face and Si-Face in Laser-Sliced 4H-SiC Wafers
p.1
Effects of Processing Passes on Laser-Sliced SiC
p.9
Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques
p.19
Impacts of Wafer Thinning Process Using Laser Slice Technique on Silicon Carbide Device Characteristics
p.25
A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-Based Devices
p.33
Damage-Free Dicing of SiC Substrate Using High-Pressure SF6 Plasma: The Time Dependence of Processed Groove Profiles
p.41
Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
p.47
Impact of Ambient Conditions on Oxide Thickness Distribution on 4H-SiC in Thermal Oxidation Furnace
p.55

Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques

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Abstract:

We propose a novel SiC wafer recycling process that employs the laser splitting and wafer bonding techniques. The process allows us to attain the recycled SiC wafers suitable for conventional device processes, leading to the reduction of SiC device costs and environmental burdens. Preliminary evaluations were conducted on the key technologies of the process: surface activated bonding and laser splitting for SiC wafers. The bonding interface was confirmed to withstand the stresses encountered during device manufacturing thanks to the recrystallization of the interface layer. The electrical characteristics of MOSFETs thinned using laser splitting showed no significant difference compared to those thinned by conventional grinding. These results demonstrate that the proposed process is a feasible technique that offers a cost-effective and eco-friendly solution for SiC power device production.

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Periodical:

Materials Science Forum (Volume 1193)

Pages:

19-24

DOI:

https://doi.org/10.4028/p-jAm4lU

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Cite this paper

Online since:

May 2026

Authors:

Takanori Tanaka*, Kyohei Akiyoshi, Kazumasa Iwanaga, Shunta Takahashi, Hiroshi Watanabe, Kenichi Hamano, Akihiko Furukawa

Keywords:

Bonding Technique, Laser Split, Recycling Wafer, Reutilization Process, SiC Wafer

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References

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