Paper Titles
Preface
Comparative Study on Grinding Behavior of C-Face and Si-Face in Laser-Sliced 4H-SiC Wafers
p.1
Effects of Processing Passes on Laser-Sliced SiC
p.9
Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques
p.19
Impacts of Wafer Thinning Process Using Laser Slice Technique on Silicon Carbide Device Characteristics
p.25
A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-Based Devices
p.33
Damage-Free Dicing of SiC Substrate Using High-Pressure SF6 Plasma: The Time Dependence of Processed Groove Profiles
p.41
Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
p.47
Impact of Ambient Conditions on Oxide Thickness Distribution on 4H-SiC in Thermal Oxidation Furnace
p.55

Comparative Study on Grinding Behavior of C-Face and Si-Face in Laser-Sliced 4H-SiC Wafers

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Abstract:

With the growing application of wide-bandgap semiconductors such as SiC in power electronics, efficient and low-damage machining of large-diameter, high-quality 4H-SiC wafers has become a critical research priority. This study systematically compares the grinding behavior of the C-and Si-faces of laser-sliced 4H-SiC wafers and reveals the effect of crystallographic anisotropy on tool wear. In the experiments, a picosecond laser was used to induce internal crystal modification, and multiple pairs of 12-inch high-purity semi-insulating crystals and wafers were obtained through ultrasonic separation. These wafers were subsequently ground using #800/#8000 resin-bonded diamond wheels. Material removal and wheel wear were recorded in real time, and the wheel wear ratio (W/M) was adopted as the key evaluation metric. Nanoindentation and white-light interferometry were further employed to characterize the mechanical properties and surface morphology of the two crystal faces. Results show that in both rough and fine grinding, the C-face demonstrates superior material removal performance despite its higher hardness, whereas the Si-face is more prone to wheel degradation. For thin wafers, residual laser focus near the surface further aggravates wheel wear. These findings establish a link between crystallographic anisotropy, laser-modified layer position, and wheel wear behavior, providing an experimental foundation for clarifying the underlying mechanisms and developing face-specific grinding strategies for high-quality SiC wafer fabrication.

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Periodical:

Materials Science Forum (Volume 1193)

Pages:

1-7

DOI:

https://doi.org/10.4028/p-Xc7FbW

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Online since:

May 2026

Authors:

Bi Xue Li, Xing Zhang, Qiu Chen, Lin Lin Che, Jian Fei Zhang, Hao Yu Fan, Xian Gang Xu, Rong Kun Wang*, Xiu Fang Chen

Keywords:

Laser Slicing, Nanoindentation, Precision Grinding, Silicon Carbide (SiC)

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Creative Commons CC BY 4.0

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* - Corresponding Author

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