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Damage-Free Dicing of SiC Substrate Using High-Pressure SF6 Plasma: The Time Dependence of Processed Groove Profiles

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Abstract:

Plasma chemical vaporization machining (PCVM) is a high-rate etching method that uses atmospheric-pressure plasma. Its application to the plasma dicing of SiC wafers is anticipated. However, since the reaction is mainly driven by neutral radicals, it is difficult to maintain anisotropy, and issues such as side etching are of concern. In this study, PCVM processing was performed using SF₆ gas with a Ni mask to investigate vertical and lateral etching behaviors. We achieved vertical etching of 100 µm within approximately 35 minutes, and lateral side etching of about 50 µm. The lateral etch rate remained nearly constant, whereas the vertical etch rate was initially high but decreased as the etching progressed, approaching the lateral rate. Finite element-based electrostatic field analysis revealed that, as the etching depth increased, electric field shielding by the mask weakened the field at the bottom of the trench, leading to a transition toward neutral radical-dominated reactions.

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Periodical:

Materials Science Forum (Volume 1193)

Pages:

41-45

DOI:

https://doi.org/10.4028/p-BAyAw0

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Online since:

May 2026

Authors:

Yuken Matsumura*, Shunto Iden, Daisetsu Toh, Jumpei Yamada, Yasuhisa Sano

Keywords:

Atmospheric-Pressure Plasma, Damage-Free, Dicing, Etching, Plasma Chemical Vaporization Machining, SF6, Time Dependance

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References

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DOI: 10.4028/p-vu2cfb

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