Effects of Processing Passes on Laser-Sliced SiC

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Abstract:

Silicon carbide (SiC), a representative of next-generation wide-bandgap semiconductors, exhibits enormous application potential in fields such as new energy vehicles, aerospace, and photovoltaic power generation. Conventional cutting methods based on diamond wire sawing suffer from high material loss and are prone to causing fractures. In contrast, laser slicing, as a kerf-free processing technology, enables the acquisition of high-quality wafers with minimal material removal. This study systematically investigates the effect of processing cycles on crack propagation and delamination strength during laser slicing of SiC. The experimental results demonstrate that under optimized parameters, an appropriate number of processing cycles can achieve successful wafer separation while maintaining surface integrity, reducing material loss, and lowering delamination strength. The established processing window provides practical guidance for improving SiC slicing quality and holds significant implications for advancing innovative wafer manufacturing technologies in power electronics applications.

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